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C 1 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? available package applications ? wideband and narrowband defense and commercial communication systems general purpose rf power C jammers C radar C professional radio systems C wimax C wideband amplifers C test instrumentation C cellular infrastructure C product features ? frequency: dc to 6 ghz ? linear gain: >10 db at 6 ghz ? operating voltage: 28 v ? output power (p 3db ): >7 w at 6 ghz ? lead-free and rohs compliant ? low thermal resistance package general description the triquint T1G6000528-Q3 is a 7 w (p 3db ) discrete gan on sic hemt which operates from dc to 6 ghz and typically provides >10 db gain at 6 ghz. the device is constructed with triquints proven 0.25 m production process, which features advanced feld plate techniques to optimize power and efciency at high drain bias operating conditions. this optimization can potentially lower system costs in terms of fewer amplifer line-ups and lower thermal management costs. package information package type description base q3 5.0mm x 4.0mm ceramic air cavity straight lead package cumo ordering information material no. part no. description 1075579 T1G6000528-Q3 packaged part 1076440 T1G6000528-Q3- evb2 standard evaluation board: 2.5 ghz to 6 ghz
C 2 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? specifcations sym parameter value v + positive supply value 2 28 v - negative supply voltage range - 10 v to 0 v i positive supply current 2 0.8 a |i g | gate supply current 12.5 ma p d power dissipation 2 10 w t ch operating channel temperature 2 200?c test conditions t ch (?c) ? jc (?c/w) 1 dc at 85c case 158 9.3 notes: 1 absolute maximum ratings at 3 ghz 2 absolute maximum ratings are set based on industry recommended standard mean time to failure (mttf) greater than 1m hours while operating at a maximum case temperature of 85c . operating at lower maximum case temperatures allows maximum operating voltage to be increased up to a maximum of 40v. application specifc limits can be determined with engineering guidance from triquint. notes: 1 thermal resistance (channel to backside of case) absolute maximum ratings 1 thermal information lifetime median curve 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 median lifetime (hours) 1.e+04 1.e+05 1.e+06 25 50 75 100 125 150 175 200 225 250 channel temperature (c) fet7
C 3 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? electrical specifcations characteristics symbol min typ max unit conditions break-down voltage drain source bv dsx 85 120 v v gs = -8 v; i d =1 ma gate quiescent voltage v gs (q) -3.2 v v ds =28 v; i dq =100 ma gate threshold voltage v gs (th) -3.5 v v ds =10 v; i d =5 ma saturated drain current i dsx 2 a v ds =5 v; v gs =0 v characteristics symbol min typ max unit narrow band performance at 6.0 ghz (v ds = 28 v, i dq = 50 ma, cw) linear gain g lin 13.0 13.5 db output power at 3 db gain compression p 3db 8.0 10.0 w drain efciency at 3 db gain compression de 3db 55 65 % power-added efciency at 3 db gain compression pae 3db 50 55 % gain at 3 db compression g 3db 10.0 10.5 db narrow band performance at 3.5 ghz (v ds = 28 v, i dq = 50 ma, cw) linear gain g lin 16.0 16.5 db output power at 3 db gain compression p 3db 8.0 10.0 w drain efciency at 3 db gain compression de 3db 55 60 % power-added efciency at 3 db gain compression pae 3db 50 55 % gain at 3 db compression g 3db 13.0 13.5 db narrow band performance at 3.5 ghz (v ds = 28 v, i dq = 50 ma, cw at p1db, applied for 3.5 secs) impedance mismatch ruggedness 1 vswr 10:1 recommended operating conditions apply unless otherwise specifed: t a =25 ?c notes: 1 vswr testing performed by increasing the real value of the impedance from reference z to 10 times reference z. dc characteristics rf characteristics
C 4 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? device characterization data T1G6000528-Q3 v ds =28v, i dq =50 ma maximum stable gain of T1G6000528-Q3 v ds =28v, i dq =50 ma s-parameter smith chart small-signal gain 2 5 10 20 50 j2 ?j2 0 j5 ?j5 0 j10 ?j10 0 j20 ?j20 0 j50 ?j50 0 6000mhz 6000mhz 100mhz s11 s22 0 1000 2000 3000 4000 5000 6000 0 5 10 15 20 25 30 35 gmax vs. frequency frequency (mhz) gain (db) max stable gain
C 5 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? freq. [ghz] real s11 imag s11 real s21 imag s21 real s12 imag s12 real s22 imag s22 0.1 0.892 -0.182 -14.955 4.241 0.005 0.005 0.440 -0.285 0.2 0.726 -0.593 -12.756 7.176 0.008 0.011 0.361 -0.316 0.3 0.438 -0.840 -10.636 9.084 0.012 0.015 0.294 -0.342 0.4 0.127 -0.926 -8.639 10.186 0.016 0.017 0.236 -0.362 0.5 -0.058 -0.910 -6.798 10.673 0.020 0.018 0.187 -0.379 0.6 -0.178 -0.894 -5.134 10.700 0.024 0.017 0.144 -0.391 0.7 -0.276 -0.856 -3.659 10.398 0.028 0.015 0.106 -0.401 0.8 -0.349 -0.817 -2.377 9.874 0.031 0.013 0.072 -0.409 0.9 -0.444 -0.777 -1.287 9.214 0.034 0.011 0.040 -0.415 1.0 -0.521 -0.726 -0.381 8.485 0.036 0.008 0.008 -0.422 1.1 -0.589 -0.669 0.353 7.737 0.037 0.006 -0.025 -0.428 1.2 -0.637 -0.608 0.929 7.010 0.038 0.004 -0.059 -0.435 1.3 -0.681 -0.558 1.365 6.329 0.038 0.002 -0.091 -0.441 1.4 -0.719 -0.501 1.677 5.712 0.037 0.000 -0.122 -0.447 1.5 -0.747 -0.452 1.886 5.168 0.037 -0.001 -0.149 -0.451 1.6 -0.769 -0.411 2.009 4.701 0.035 -0.002 -0.173 -0.454 1.7 -0.786 -0.375 2.066 4.309 0.034 -0.003 -0.194 -0.455 1.8 -0.799 -0.344 2.074 3.986 0.033 -0.004 -0.213 -0.454 1.9 -0.810 -0.315 2.049 3.724 0.031 -0.005 -0.231 -0.451 2.0 -0.818 -0.289 2.006 3.515 0.030 -0.005 -0.249 -0.446 2.1 -0.826 -0.263 1.958 3.348 0.028 -0.005 -0.268 -0.439 2.2 -0.833 -0.238 1.915 3.213 0.027 -0.006 -0.287 -0.431 2.3 -0.839 -0.214 1.886 3.099 0.026 -0.006 -0.306 -0.422 2.4 -0.844 -0.190 1.878 2.997 0.026 -0.006 -0.323 -0.412 2.5 -0.849 -0.166 1.895 2.899 0.025 -0.007 -0.339 -0.402 2.6 -0.853 -0.143 1.940 2.798 0.025 -0.007 -0.352 -0.393 2.7 -0.856 -0.119 2.012 2.689 0.025 -0.007 -0.363 -0.384 2.8 -0.858 -0.094 2.110 2.568 0.025 -0.007 -0.372 -0.377 2.9 -0.859 -0.067 2.231 2.432 0.026 -0.008 -0.380 -0.370 3.0 -0.858 -0.038 2.370 2.282 0.026 -0.008 -0.389 -0.364 3.1 -0.857 -0.006 2.522 2.118 0.027 -0.008 -0.397 -0.359 3.2 -0.854 0.028 2.678 1.941 0.028 -0.009 -0.406 -0.354 3.3 -0.850 0.063 2.832 1.755 0.029 -0.009 -0.414 -0.349 3.4 -0.845 0.098 2.974 1.564 0.030 -0.009 -0.424 -0.344 3.5 -0.839 0.132 3.097 1.371 0.030 -0.009 -0.433 -0.339 3.6 -0.833 0.165 3.193 1.182 0.031 -0.009 -0.443 -0.332 3.7 -0.825 0.196 3.252 1.002 0.031 -0.009 -0.453 -0.324 3.8 -0.817 0.226 3.268 0.835 0.031 -0.008 -0.463 -0.315 3.9 -0.809 0.253 3.234 0.685 0.030 -0.008 -0.472 -0.303 4.0 -0.800 0.278 3.145 0.555 0.029 -0.007 -0.481 -0.290 4.1 -0.790 0.300 2.998 0.449 0.028 -0.007 -0.490 -0.273 4.2 -0.780 0.321 2.798 0.370 0.026 -0.006 -0.498 -0.255 4.3 -0.770 0.341 2.800 0.349 0.023 -0.005 -0.506 -0.237 4.4 -0.759 0.360 2.798 0.363 0.020 -0.004 -0.513 -0.218 4.5 -0.746 0.379 2.789 0.430 0.016 -0.003 -0.520 -0.201 4.6 -0.733 0.400 2.759 0.590 0.012 -0.002 -0.527 -0.186 4.7 -0.720 0.421 2.652 0.962 0.008 -0.001 -0.534 -0.172 4.8 -0.706 0.443 2.054 1.934 0.003 0.000 -0.540 -0.160 4.9 -0.693 0.464 -0.806 2.704 -0.002 0.001 -0.547 -0.150 5.0 -0.681 0.486 -2.262 1.685 -0.007 0.002 -0.553 -0.139 5.1 -0.671 0.507 -2.554 1.198 -0.012 0.002 -0.559 -0.130 5.2 -0.657 0.528 -2.647 0.975 -0.018 0.003 -0.565 -0.120 5.3 -0.638 0.551 -2.687 0.860 -0.022 0.003 -0.571 -0.111 5.4 -0.609 0.576 -2.703 0.805 -0.027 0.003 -0.577 -0.101 5.5 -0.566 0.605 -2.705 0.798 -0.031 0.002 -0.582 -0.092 5.6 -0.512 0.634 -2.692 0.842 -0.033 0.002 -0.588 -0.082 5.7 -0.464 0.657 -2.653 0.957 -0.035 0.002 -0.593 -0.072 5.8 -0.389 0.687 -2.562 1.184 -0.036 0.003 -0.597 -0.061 5.9 -0.295 0.709 -2.203 1.485 -0.035 0.003 -0.601 -0.049 6.0 -0.168 0.688 -1.649 1.944 -0.032 0.005 -0.605 -0.037 s-parameter data (v ds = 28 v, i dq = 50 ma)
C 6 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? device characterization data load-pull data test conditions: v dd = 28 v, i dq = 50 ma, test signal = cw 5 12.5 25 50 125 j5 ?j5 0 d j12.5 ?j12.5 0 d j25 ?j25 0 d j50 ?j50 0 d j125 ?j125 0 d 500 mhz 500 mhz 500 mhz 500 mhz 6000 mhz 6000 mhz 6000 mhz 6000 mhz z l eff z l pwr z l cmp z s
C 7 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? freq. [mhz] real(zs) imag(zs) real(zl) imag(zl) g3db [db] p3db [dbm] p3db [w] pae @3db[%] 500 5.00 86.68 26.11 1.23 17.8 38.8 7.6 54.0 600 5.00 80.16 25.94 1.34 17.9 38.9 7.7 54.4 700 5.00 72.72 25.77 1.47 17.9 38.9 7.8 54.8 800 5.00 65.74 25.62 1.59 18.0 39.0 7.9 55.2 900 5.00 59.41 25.46 1.73 18.0 39.0 8.0 55.6 1000 5.00 53.61 25.31 1.87 18.1 39.1 8.1 56.0 1100 5.00 48.21 25.16 2.01 18.1 39.3 8.6 57.4 1200 5.00 43.15 25.01 2.15 18.2 39.6 9.1 58.8 1300 5.00 38.42 24.86 2.29 18.2 39.8 9.6 60.2 1400 5.00 34.02 24.71 2.43 18.3 40.1 10.1 61.6 1500 5.00 29.98 24.55 2.57 18.3 40.3 10.7 63.0 1600 5.00 26.32 24.40 2.71 18.3 40.5 11.3 64.4 1700 5.00 23.05 24.23 2.84 18.4 40.8 12.0 65.8 1800 5.00 20.16 24.06 2.97 18.4 41.0 12.6 67.2 1900 5.00 17.62 23.89 3.09 18.5 41.3 13.4 68.6 2000 5.00 15.40 23.71 3.20 18.5 41.5 14.1 70.0 2100 5.00 13.46 23.52 3.31 18.2 41.5 14.0 68.6 2200 5.00 11.77 23.32 3.40 17.8 41.4 13.8 67.2 2300 5.00 10.29 23.11 3.49 17.5 41.4 13.6 65.8 2400 5.00 8.97 22.90 3.56 17.1 41.3 13.5 64.4 2500 5.00 7.78 22.67 3.62 16.8 41.3 13.3 63.0 2600 5.00 6.66 22.43 3.68 16.4 41.2 13.2 61.6 2700 5.00 5.60 22.18 3.73 16.1 41.2 13.0 60.2 2800 5.00 4.56 21.93 3.77 15.7 41.1 12.9 58.8 2900 5.00 3.55 21.66 3.81 15.4 41.1 12.7 57.4 3000 5.00 2.54 21.38 3.85 15.0 41.0 12.6 56.0 3100 5.00 1.55 21.09 3.88 14.9 41.0 12.5 56.6 3200 5.00 0.59 20.79 3.92 14.8 41.0 12.5 57.2 3300 5.00 -0.33 20.48 3.97 14.8 40.9 12.4 57.8 3400 5.00 -1.20 20.16 4.01 14.7 40.9 12.4 58.4 3500 5.00 -2.03 19.84 4.04 14.6 40.9 12.3 59.0 3600 5.00 -2.80 19.52 4.06 14.5 40.9 12.2 59.6 3700 5.00 -3.53 19.20 4.05 14.4 40.9 12.2 60.2 3800 5.00 -4.23 18.89 4.00 14.4 40.8 12.1 60.8 3900 5.00 -4.89 18.60 3.93 14.3 40.8 12.1 61.4 4000 5.00 -5.52 18.32 3.80 14.2 40.8 12.0 62.0 4100 5.00 -6.14 18.06 3.63 14.0 40.8 11.9 62.0 4200 5.00 -6.74 17.82 3.40 13.9 40.7 11.8 62.0 4300 5.00 -7.33 17.60 3.11 13.7 40.7 11.7 62.0 4400 5.00 -7.93 17.40 2.77 13.6 40.6 11.6 62.0 4500 5.00 -8.52 17.23 2.38 13.4 40.6 11.5 62.0 4600 5.00 -9.11 17.07 1.95 13.2 40.6 11.4 62.0 4700 5.00 -9.73 16.93 1.48 13.1 40.5 11.3 62.0 4800 5.00 -10.36 16.82 0.97 12.9 40.5 11.2 62.0 4900 5.00 -11.03 16.71 0.43 12.8 40.4 11.1 62.0 5000 5.00 -11.75 16.63 -0.14 12.6 40.4 11.0 62.0 5100 5.00 -12.54 16.57 -0.73 12.5 40.4 11.0 61.7 5200 5.00 -13.41 16.52 -1.36 12.4 40.4 11.0 61.4 5300 5.00 -14.39 16.49 -2.00 12.3 40.4 11.0 61.1 5400 5.00 -15.52 16.48 -2.67 12.2 40.4 11.0 60.8 5500 5.00 -16.84 16.50 -3.36 12.1 40.4 11.0 60.5 5600 5.00 -18.43 16.53 -4.08 11.9 40.4 11.0 60.2 5700 5.00 -20.37 16.59 -4.82 11.8 40.4 11.0 59.9 5800 5.00 -22.78 16.68 -5.58 11.7 40.4 11.0 59.6 5900 5.00 -25.88 16.80 -6.37 11.6 40.4 11.0 59.3 6000 5.00 -29.97 16.95 -7.19 11.5 40.4 11.0 59.0 load-pull data rf performance that the device typically exhibits when placed in the specifed impedance environment. the impedances are not the impedances of the device, they are the impedances presented to the device via an rf circuit or load-pull system. the impedances listed follow an optimized trajectory to maintain high power and high efciency (zlcmp). test conditions: v ds =28v, i dq = 50ma
C 8 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? typical performance: gain, efciency and output power 26 28 30 32 34 36 38 40 42 12 13 14 15 16 17 18 19 20 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 3ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 2.72 + j0.10 7 z l = 23.14 + j0.58 7 26 28 30 32 34 36 38 40 42 12 13 14 15 16 17 18 19 20 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 4ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 2.16 ? j6.47 z l = 18.02 + j6.49 7 26 28 30 32 34 36 38 40 42 10 11 12 13 14 15 16 17 18 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 5ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 2.77 ? j11.01 z l = 13.85 + j1.40 7 26 28 30 32 34 36 38 40 42 8 9 10 11 12 13 14 15 16 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 26 28 30 32 34 36 38 40 42 0 10 20 30 40 50 60 70 80 pout [dbm] gain [db] deff. & pae [%] gain, deff., and pae vs. pout freq = 6ghz; vds = 28v, idq = 50ma; cw gain deff. pae z s = 12.99 ? j30.90 z l = 18.88 ? j8.87 performance is measured at dut reference plane gain def., and pae vs. pout freq. = 3ghz; v ds = 28v, i dq = 50 ma; cw gain def., and pae vs. pout freq. = 5ghz; v ds = 28v, i dq = 50 ma; cw gain def., and pae vs. pout freq. = 4ghz; v ds = 28v, i dq = 50 ma; cw gain def., and pae vs. pout freq. = 6ghz; v ds = 28v, i dq = 50 ma; cw
C 9 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? mechanical information package information and dimensions this package is lead-free/rohs-compliant. note: unless specifed otherwise, dimensions are in millimeters
C 10 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? product compliance information esd information caution! esd-sensitive device esd rating: 1a value: passes 250 v min. test: human body model (hbm) standard: jedec standard jesd22-a114 eccn u.s. department of commerce ear99
C 11 C T1G6000528-Q3 7w, 28v, dc C 6 ghz, gan rf power transistor released datasheet: rev. h 11/5/2010 copyright ? 2010 triquint semiconductor, inc. disclaimer: subject to change without notice connecting the digital world to the global network? contact information important notice for the latest specifcations, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life- sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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